2SC1449

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1449 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·High frequency amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 40 35 5 2 1 1.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat hFE ICBO IEBO COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Output capacitance Transition frequency CONDITIONS IC=100μA;IE=0 IC=10mA; IB=0 IE=100μA; IC=0 IC=500mA ;IB=50m A IC=500mA ;IB=50m A IC=300mA ; VCE=2V VCB=35V; IE=0 VEB=4V; IC=0 IE=0; VCB=10V;f=1MHz IC=100mA ; VCE=5V 20 55 40 MIN 40 35 5 TYP. 2SC1449 MAX UNIT V V V 0.7 1.5 250 0.5 0.5 V V μA μA pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1449 Fig.2 outline dimensions 3