2SC1450

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V(min) ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=80℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 0.4 20 150 -65~200 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1450 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA; IE=0 IE=1mA; IC=0 150 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V μA μA ICBO Collector cut-off current VCB=150V;IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.1A ; VCE=5V 30 150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1450 Fig.2 outline dimensions 3