Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1501
DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large power dissipation APPLICATIONS ·For medium power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 0.15 10 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE hFE-1 hFE-2 ICBO COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain Collector cut-off current Output capacitance Transition frequency CONDITIONS IC=100μA;IE=0 IC=1mA; IB=0 IE=100μA; IC=0 IC=100mA IB=10m A IC=50mA ; VCE=10V IC=10mA ; VCE=10V IC=50mA ; VCE=10V VCB=300V ; IE=0 IE=0; VCB=30V;f=1MHz IE=20mA ; VCB=30V 8 55 30 30 MIN 300 300 5 TYP.
2SC1501
MAX
UNIT V V V
5.0 1.2
V V
200 100 μA pF MHz
hFE-2 classifications P 30-60 Q 50-100 R 80-150 S 100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1501
Fig.2 outline dimensions
3
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