2SC1505

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz(Min) APPLICATIONS ・For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PT Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 7 0.2 1.2 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10μA ;IE=0 IC=1mA ;IB=0 IE=10μA ;IC=0 IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IE=0; VCB=50V;f=1MHz IC=10mA ; VCE=30V 50 40 MIN 300 300 7 2SC1505 TYP. MAX UNIT V V V 2.0 0.1 0.1 200 4.5 80 V μA μA pF MHz hFE classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1505 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3