2SC1507

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz(Min) APPLICATIONS ・For color TV chroma output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.2 15 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10μA ;IE=0 IC=10mA ;IB=0 IE=10μA ;IC=0 IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=10V IE=0; VCB=50V;f=1MHz IC=10mA ; VCE=30V 40 40 4 MIN 300 300 7 2SC1507 TYP. MAX UNIT V V V 2.0 100 100 240 V μA μA pF MHz 80 hFE classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1507 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3