2SC1514

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 0.1 A 10 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.25 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 10μA ; IE= 0 IC= 1mA ; RBE= ∞ IE= 10μA ; IC= 0 MIN 2SC1514 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage 300 V V(BR)CEO Collector-Emitter Breakdown Voltage 300 V V(BR)EBO Emitter-Base Breakdown Vltage 5 V VCE(sat) ICEO Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA VCE= 250V; RBE= ∞ 1.5 V μA Collector Cutoff Current 1 hFE DC Current Gain IC= 20mA ; VCE= 20V 30 200 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 20V 80 MHz COB Output Capacitance IE= 0; VCB= 20V,ftest= 1MHz 4 pF isc Website：www.iscsemi.cn 2