2SC1567A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications ·Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC1567 VCBO Collector-base voltage 2SC1567A 2SC1567 VCEO Collector- emitter voltage 2SC1567A VEBO IC ICM PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 5 0.5 1 1.2 150 -55～+150 V A A W ℃ ℃ Open emitter 120 100 V CONDITIONS VALUE 100 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1567 2SC1567A MIN TYP. MAX UNIT 2SC1567 V(BR)CEO Collector-emitter breakdown voltage 2SC1567A IC=0.1mA ;IB=0 100 V 120 V(BR)EBO Emitter-base breakdown voltage IE=1μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50m A 0.85 1.2 V hFE-1 DC current gain IC=150mA ; VCE=10V 65 330 hFE-2 DC current gain IC=0.5A ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 11 pF fT Transition frequency IC=50mA ; VCE=10V,f=200MHz 120 MHz hFE-1 Classifications R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1567 2SC1567A Fig.2 Outline dimensions 3