2SC1577

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 DESCRIPTION ·With TO-3 package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 8 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1577 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=5A; IB=1A 7 V Collector-emitter saturation voltage 0.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 30 fT Transition frequency IC=0.5A ; VCE=12V 7 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1577 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3