2SC1586

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION ·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 6 15 4 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1586 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=5A; IB=0.5A 6 V Collector-emitter saturation voltage 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V 60 fT Transition frequency IC=1A ; VCE=12V 10 MHz COB Collector output capacitance IE=0 ; VCB= 10V; f=1MHz 110 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1586 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3