2SC1625

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC1624 VCBO Collector-base voltage 2SC1625 2SC1624 VCEO Collector-emitter voltage 2SC1625 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 100 5 1 -1 15 150 -55~150 V A A W ℃ ℃ Open emitter 100 120 V CONDITIONS VALUE 120 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1624 V(BR)CEO Collector-emitter breakdown voltage 2SC1625 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=1mA ;IC=0 IC=500mA; IB=50m A IC=500mA ; VCE=5V VCB=50V;IE=0 VEB=5V; IC=0 IC=150mA ; VCE=5V IC=500mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=150mA ; VCE=5V IC=10mA; IB=0 CONDITIONS 2SC1624 2SC1625 MIN 120 TYP. MAX UNIT V 100 5 0.5 1.0 1.0 1.0 70 40 20 30 pF MHz 240 V V V μA μA hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1624 2SC1625 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3