2SC1678

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1678 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 65 65 4 3 0.4 -3 10 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Collectpr output capacitance Transition frequency CONDITIONS IC=0.5A; IB=50m A IC=1mA; IE=0 IC=10mA; IB=0 IE=1mA; IC=0 VCB=30V;IE=0 VCE=20V;IB=0 IC=0.5A ; VCE=5V IC=1.5A ; VCE=5V IE=0 ; VCB=10V, f=1MHz IC=0.1A ; VCE=5V 100 15 10 65 65 4 MIN 2SC1678 TYP. MAX 1.0 UNIT V V V V 10 100 μA μA 30 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1678 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3