2SC1683

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1683 DESCRIPTION ·With TO-220C package ·Complement to type 2SA843 ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Audio frequency power amplifier ·Color TV vertical deflection output PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 500 2 20 150 -50~150 UNIT V V V mA A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1683 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ; IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBE Base-emitter on voltage IC=400m A ; VCE=10V 1.0 V μA μA ICBO Collector cut-off current VCB=200V ;IE=0 50 IEBO Emitter cut-off current VEB=4V; IC=0 50 hFE DC current gain IC=400m A ; VCE=10V 60 200 hFE Classifications P 60-140 Q 85-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1683 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3