2SC1722

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1722 DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 12.5 150 -45~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 1.8 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=5mA ; RBE=∞ IC=100μA ; IE=0 IE=100μA ; IC=0 MIN 2SC1722 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 300 V V(BR)CBO Collector-base breakdown voltage 300 V V(BR)EBO Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 2.0 V VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.68 0.9 V μA μA ICBO Collector cut-off current VCB=250V ;IE=0 VCE=250V; RBE=∞ 0.1 ICEO Collector cut-off current 2 hFE DC current gain IC=50m A ; VCE=10V 50 300 fT Transition frequency IC=30m A ; VCE=20V 80 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.3 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1722 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3