Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1723
DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply driver
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
·
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 15 150 -45~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=5mA ; RBE=∞ IC=100μA ; IE=0 IE=100μA ; IC=0 MIN
2SC1723
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
300
V
V(BR)CBO
Collector-base breakdown voltage
300
V
V(BR)EBO
Emitter-base breakdown voltage
5
V
VCEsat
Collector-emitter saturation voltage
IC=100mA; IB=10mA
0.32
1.5
V
VBE
Base-emitter on voltage
IC=50m A ; VCE=10V
0.66
0.9
V μA μA
ICBO
Collector cut-off current
VCB=250V ;IE=0 VCE=250V; RBE=∞
0.1
ICEO
Collector cut-off current
2
hFE
DC current gain
IC=50m A ; VCE=10V
40
200
fT
Transition frequency
IC=30m A ; VCE=20V
60
MHz
COB
Output capacitance
IE=0 ; VCB=50V; f=1MHz
6.2
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1723
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
很抱歉,暂时无法提供与“2SC1723”相匹配的价格&库存,您可以联系我们找货
免费人工找货