2SC1730

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.25 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1730 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 180 fT Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 800 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.5 pF rbb’ • CC Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz 10 15 ps hFE Classifications Marking hFE M 40-80 L 60-120 K 90-180 isc Website：www.iscsemi.cn 2