2SC1755

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage APPLICATIONS ・For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1755 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -40~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.2 0.7 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50mA ;IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=10mA ; VCE=30V f=1MHz;VCB=50V 40 50 MIN 300 2SC1755 TYP. MAX UNIT V 2.0 0.1 0.1 200 V μA μA MHz 5.3 pF hFE classifications C 40-80 D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1755 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1755 4