2SC1783

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1783 DESCRIPTION ·With TO-3 package ·High power dissipation ·High speed ,high current APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 180 120 6 10 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=180V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V 30 MIN 120 6 2SC1783 TYP. MAX UNIT V V 1.5 2.0 100 100 V V μA μA 165 10 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1783 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3