2SC1819M

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 7 0.1 0.2 15 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=100μA ;IE=0 IC=100A ;IB=0 IE=100μA ;IC=0 IC=50mA ;IB=5mA IC=30mA ; VCE=10V IC=5mA ; VCE=50V IC=30mA ; VCE=10V IE=0; VCB=30V;f=1MHz IC=20mA ; VCE=30V 70 50 30 MIN 300 300 7 2SC1819M TYP. MAX UNIT V V V 1.5 1.2 250 V V 5 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1819M Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3