2SC1846

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1846 ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 45 35 5 1 1.5 1.2*1 PC Collector power dissipation TC=25℃ 5* Tj Tstg Junction temperature Storage temperature 2 UNIT V V V A A W 150 -55~150 ℃ ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=0.5A ;IB=50mA VCB=20V; IE=0 VCE=20V; IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCB=10V,f=200MHz 85 50 MIN 35 45 2SC1846 TYP. MAX UNIT V V 0.5 0.1 100 10 340 V μA μA μA 20 200 pF MHz hFE-1 Classifications Q 85-170 R 120-240 S 170-340 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1846 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1846 4