2SC1847

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1847 ・ Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 1.5 3 1.2*1 PC Collector power dissipation TC=25℃ 5*2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ W UNIT V V V A A Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=20V; IE=0 VCE=10V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=20V;f=1MHz IC=0.5A ; VCB=5V,f=200MHz 80 MIN 40 50 2SC1847 TYP. MAX UNIT V V 1.0 1.5 1 100 10 220 35 150 V V μA μA μA pF MHz hFE Classifications Q 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1847 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1847 4