Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1863
DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·Designed for general-purpose amplifier and switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 150 100 7 7 40 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IE=1mA ; IC=0 IC=1A ;IB=0.1A IC=1A ; VCE=2V VCB=150V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 20 15 MIN 100 7
2SC1863
TYP.
MAX
UNIT V V
0.5 1.0 100 100
V V μA μA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1863
Fig.2 Outline dimensions
3
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