2SC1871A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1871A DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb≤25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 3 100 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V IC=10A ; VCE=5V 15 10 MIN 400 500 7 2SC1871A TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1871A Fig.2 Outline dimensions 3