2SC1880

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1880 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 120 5 2 4 15 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA, IB=0 IC=1mA, IE=0 IE=50mA, IC=0 IC=2A ,IB=8mA VCB=100V, IE=0 VCE=100V, IB=0 VEB=5V; IC=0 IC=2A ; VCE=2V 1000 MIN 120 120 5 2SC1880 TYP. MAX UNIT V V V 1.2 0.1 0.1 50 V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1880 Fig.2 Outline dimensions 3