2SC1905

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION ・With TO-220C package ・High breakdown voltage ・Large collector power dissipation APPLICATIONS ・Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 350 300 7.5 200 400 15 150 -55~150 UNIT V V V mA mA W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1905 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 IC=100μA ; IE=0 IE=100μA ; IC=0 300 V V(BR)CBO Collector-base breakdown voltage 350 V V(BR)EBO Emitter-base breakdown voltage 7.5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 V μA μA ICBO Collector cut-off current VCB=200V ;IE=0 2 IEBO Emitter cut-off current VEB=5V; IC=0 2 hFE DC current gain IC=10m A ; VCE=10V 40 250 fT Transition frequency IC=10m A ; VCE=30V 50 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.5 pF μs tstg Storage time IC=100mA; IB1=10mA; IB2=0 5 7.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1905 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3