2SC1906

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) ICBO hFE fT COB rbb’ • CC PG PG PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance Base Time Constant Power Gain Power Gain CONDITIONS IC= 10μA ; IE= 0 IC= 3mA ; RBE= ∞ IE= 10μA ; IC= 0 IC= 20mA ; IB= 4mA VCB= 10V; IE= 0 IC= 10mA ; VCE= 10V IC= 10mA ; VCE= 10V IE= 0 ; VCB= 10V;f= 1.0MHz VCB= 10V,IC = 10 mA,f = 31.8 MHz VCE = 10 V,IC = 5mA;f = 45MHz VCE = 10 V,IC = 5mA;f = 200MHz 40 600 MIN 30 19 2 2SC1906 TYP. MAX UNIT V V V 1.0 0.5 V μA 1000 1.0 10 33 18 2.0 25 MHz pF ps dB dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 isc Website：www.iscsemi.cn 4