2SC1913A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC1913 VCBO Collector-base voltage 2SC1913A 2SC1913 VCEO Collector-emitter voltage 2SC1913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 180 5 1 1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1913 V(BR)CEO Collector-emitter breakdown voltage 2SC1913A V(BR)EBO Emitter-base breakdown voltage 2SC1913 VCEsat Collector-emitter saturation voltage 2SC1913A VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=0.3A; IB=30mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=100V;f=1MHz IC=50mA ; VCE=10V IC=0.3A; IB=30mA IE=10μA ,IC=0 IC=0.1mA ,IB=0 CONDITIONS 2SC1913 2SC1913A MIN 150 TYP. MAX UNIT V 180 5 1.0 V 1.5 1.5 1 1 65 50 15 120 pF MHz 330 V μA μA V hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1913 2SC1913A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3