2SC1929

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1929 DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 6 0.4 1 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IE=5mA ;IC=0 IC=500mA; IB=50mA IC=0.1A ; VCE=5V VCB=300V; IE=0 IC=0.1A ; VCE=5V IC=0.3A ; VCE=5V IC=0.1A ; VCE=5V 35 30 80 MIN 300 6 2SC1929 TYP. MAX UNIT V V 2.0 1.5 10 330 V V μA MHz hFE-1 Classifications S 35-70 R 60-120 Q 100-200 P 165-330 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1929 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3