2SC1953

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50 100 1.2 150 -55~150 UNIT V V V mA mA W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1mA;IB=0 IE=10μA ;IC=0 IC=30mA ;IB=3mA VCB=100V; IE=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IE=-10mA ; VCB=10V 70 130 MIN 150 5 2SC1953 TYP. MAX UNIT V V 1 1 330 3 V μA pF MHz hFE Classifications R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1953 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 4