2SC1969

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION ·High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1.7 150 -55~150 ℃ ℃ VALUE 60 25 5 6 20 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 73.5 6.25 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1969 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 60 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 5 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 12V 10 180 PO Output Power VCC= 12V; Pin= 1W; f= 27MHz 16 18 W ηC Collector Efficiency 60 70 % hFE Classifications X 10-25 A 20-45 B 35-70 C 55-110 D 90-180 isc Website：www.iscsemi.cn