2SC1970

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION ·High Power Gain: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1 150 -55~150 ℃ ℃ VALUE 40 17 4 0.6 5 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 125 25 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1970 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V 10 180 PO Output Power VCC= 13.5V; Pin= 0.12W; f= 175MHz 1 1.2 W ηC Collector Efficiency 50 60 % hFE Classifications X 10-25 A 20-45 B 35-70 C 55-110 D 90-180 isc Website：www.iscsemi.cn