2SC1986

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC1985 VCBO Collector-base voltage 2SC1986 2SC1985 VCEO Collector-emitter voltage 2SC1986 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 6 6 3 40 150 -55~150 V A A W ℃ ℃ Open emitter 100 60 V CONDITIONS VALUE 80 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1985 V(BR)CEO Collector-emitter breakdown voltage 2SC1986 VCEsat Collector-emitter saturation voltage 2SC1985 ICBO Collector cut-off current 2SC1986 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VCB=100V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V IC=3A; IB=0.3A VCB=80V; IE=0 IC=25mA ,IB=0 CONDITIONS 2SC1985 2SC1986 MIN 60 TYP. MAX UNIT V 80 1.0 V 1.0 mA 1.0 40 10 mA MHz Switching times tr tstg tf Rise time Storage time Fall time IC=3A ; VCC=9V IB1=-IB2=0.3A;RL=3Ω 1.1 1.8 0.55 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1985 2SC1986 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3