2SC2023

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2023 DESCRIPTION ·With TO-220C package ·High breakdown voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 2 0.2 40 150 -50~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=1A; IB=0.2A VCB=300V ;IE=0 VEB=6V; IC=0 IC=0.5 A ; VCE=4V IC=0.2A ; VCE=12V f=1MHz ; VCB=10V 30 10 75 MIN 300 TYP. 2SC2023 MAX UNIT V 1.0 1.0 1.0 V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=1A, IB1=0.1A IB2=-0.2A; VCC=100V RL=100Ω 0.30 4.00 1.00 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2023 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3