2SC2027

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2027 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage ,power switching and TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 7.5 50 175 -65~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2027 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 800 V V(BR)EBO VCEsat Emitter-base breakdown votage IE=1mA; IC=0 IC=4.0 A;IB=1.3 A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=4.0 A;IB=1.3 A 1.5 V μA μA ICBO Collector cut-off current VCB=600V;IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=4.5A ; VCE=5V 2.25 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2027 Fig.2 Outline dimensions 3