2SC2073

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION ·Collector-Emitter Breakdown Voltage:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 150 150 5 1.5 0.5 1.5 UNIT V V V A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 25 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2073 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 10V 0.85 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 500mA ; VCE= 10V 40 140 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 35 pF fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 4 MHz isc Website：www.iscsemi.cn 2