2SC2078

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION ·Collector-Emitter Voltage:VCER= 75V(Min) ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE=150Ω Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=50℃ TJ Tstg Junction Temperature Storage Temperature Range 10 150 -55~150 ℃ ℃ VALUE 80 75 5 3 5 1.2 W UNIT V V V A A isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2078 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC=0.1mA; RBE=150Ω 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE=0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 0.1A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 500mA ; VCE= 5V 25 200 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 45 60 pF fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 100 MHz PO Output Power VCC= 12V;Pin=0.2W, f=27MHz 4.0 W η Power Efficiency 60 % hFE Classifications B 25-50 C 40-80 D 60-120 E 100-200 isc Website：www.iscsemi.cn 2