INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2189
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation
APPLICATIONS ·Designed for high speed switching and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER MAX UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
10
A
PC
80
W
Tj
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2189
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
1.5
V
hFE
DC Current Gain
IC= 4A; VCE= 5V
40
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
mA
isc Website:www.iscsemi.cn
很抱歉,暂时无法提供与“2SC2189”相匹配的价格&库存,您可以联系我们找货
免费人工找货