2SC2233

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage:VCEO= 60V(Min) ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 200 60 5 4 10 1 1.5 UNIT V V V A A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 40 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2233 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A B 1.5 V ICBO Collector Cutoff Current VCB= 170V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE -1 DC Current Gain IC= 1A ; VCE= 5V 30 150 hFE -2 DC Current Gain IC= 4A ; VCE= 5V 20 fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V 8 MHz isc Website：www.iscsemi.cn 2