Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2SC2238 VCBO Collector-base voltage 2SC2238A 2SC2238B 2SC2238 VCEO Collector-emitter voltage 2SC2238A 2SC2238B VEBO IC IE PT Tj Tstg Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 160 180 200 160 180 200 5 1.5 -1.5 25 150 -55~150 V A A W ℃ ℃ V V UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency
2SC2238 2SC2238A 2SC2238B
CONDITIONS
MIN 160
TYP.
MAX
UNIT
IC=10mA; IB=0
180 200
V
IE=1mA; IC=0 IC=500A; IB=50mA IC=500mA ; VCE=5V VCB=160V ;IE=0 VEB=5V; IC=0 IC=100mA ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V
5 1.5 1.0 1.0 1.0 70 25 100 240
V V V μA μA
pF MHz
hFE Classifications O 70-140 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2238 2SC2238A 2SC2238B
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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