2SC2239

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous Total Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 25 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2239 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0 B 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA ; IC= 0 5 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V Base-Emitter On Voltage IC=0.5A ; VCE= 5V VCB= 160V ; IE= 0 1.0 V μA μA Collector Cutoff Current 1.0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 1.0 hFE DC Current Gain IC=0.1A ; VCE=5V 70 240 COB Output Capacitance IE= 0; VCB=10V; ftest= 1MHz IC=0.1A;VCE=10V 25 pF fT Current-Gain—Bandwidth Product 100 MHz hFE Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2