2SC2242

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product: fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ 50 mA 1.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2242 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 10V 0.9 V ICBO Collector Cutoff Current VCB= 240V; IE=0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 μA hFE DC Current Gain IC= 50mA ; VCE= 10V 40 170 COB Output Capacitance IE= 0 ; VCB= 50V; ftest=1MHz 5.5 12 pF fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 50V 20 50 MHz isc Website：www.iscsemi.cn 2