2SC2243

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range MAX 450 400 5 5 10 2 100 200 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2243 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V hFE DC Current Gain IC= 2A; VCE= 5V VCB= 450V; IE= 0 TC=125℃ VCE= 400V; IB= 0 10 1.0 4.0 5.0 ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr Rise Time IC=2A; IB1=- IB2= 0.4A 1.0 μs tstg Storage Time 2.0 μs tf Fall Time 1.0 μs isc Website：www.iscsemi.cn