2SC2246

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Power switching ・Power amplification ・power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tmb=25℃ CONDITIONS Open emitter Open base Open collector VALUE 450 400 5 15 30 6 100 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=6A; IB=1.2A IC=6A ;IB=1.2A VCB=450V; IE=0 TC=125℃ VCE=400V; IB=0 VEB=5V; IC=0 IC=6A ; VCE=5V 10 MIN 400 2SC2246 TYP. MAX UNIT V 1.2 1.5 1 4 5.0 1.0 V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=6A ;IB1=- IB2=1.2A 1.0 2.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2246 Fig.2 Outline dimensions 3