2SC2248

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 3 A PC 40 W Tj 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2248 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V hFE DC Current Gain IC= 3A; VCE= 5V VCB= 450V; IE= 0 TC=125℃ VCE= 400V; IB= 0 10 1.0 4.0 5.0 ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr Rise Time IC=3A; IB1=- IB2= 0.6A 1.0 μs tstg Storage Time 2.0 μs tf Fall Time 1.0 μs isc Website：www.iscsemi.cn