2SC2261

INCHANGE Semiconductor isc Product Specification 2SC2261 isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 3 A PC 80 W Tj 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SC2261 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 3A; VCE= 4V 30 fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 15 MHz isc Website：www.iscsemi.cn