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2SC2262

2SC2262

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC2262 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC2262 数据手册
INCHANGE Semiconductor isc Product Specification 2SC2262 isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 3 A PC 80 W Tj 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SC2262 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 3A; VCE= 4V 30 fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 15 MHz isc Website:www.iscsemi.cn
2SC2262 价格&库存

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