2SC2275

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2275 VCBO Collector-base voltage 2SC2275A 2SC2275 VCEO Collector-emitter voltage 2SC2275A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 150 5 1.5 3.0 0.3 25 150 -55~150 V A A A W ℃ ℃ Open emitter 150 120 V CONDITIONS VALUE 120 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2275 2SC2275A MIN TYP. MAX UNIT 2SC2275 V(BR)CEO Collector-emitter breakdown voltage 2SC2275A IC=25mA ,IB=0 120 V 150 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE-1 DC current gain IC=5mA ; VCE=5V 35 hFE-2 DC current gain IC=0.3A ; VCE=5V 60 150 320 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 19 pF fT Transition frequency IC=0.2A ; VCE=5V 200 MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2275 2SC2275A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3