2SC2293

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range MAX 500 400 7 10 20 4 8 100 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2293 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 200mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V hFE-1 DC Current Gain IC= 5A; VCE= 2V 15 hFE-2 DC Current Gain IC= 10A; VCE= 2V 8 ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 20 MHz Switching Times ton Turn-On Time IC= 5A; IB1=- IB2= 1A; RL= 5Ω; VBB2= 4V 1.0 μs tstg Storage Time 3.0 μs tf Fall Time 0.7 μs isc Website：www.iscsemi.cn