2SC2307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 500 400 7 12 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=500V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V IC=1A ; VCE=12V 10 18 MIN 400 500 7 2SC2307 TYP. MAX UNIT V V V 0.5 1.3 100 100 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2307 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3