2SC2333

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION ・With TO-220C package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulator ・DC-DC converter ・Ultrasonic appliance PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 4 1 15 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICER ICEX1 ICEX2 ICBO IEBO hFE-1 hFE-2 ton tstg tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Turn on time Storage time Fall time IC=0.5A;IB1=-IB2=0.1A RL=300Ω;VCC=150V CONDITIONS IC=0.5A;IB=0.1A;L=1mA IC=0.5A; IB=0.1A IC=0.5A; IB=0.1A VCE=400V;RBE=51Ω; Ta=125℃ VCE=400V;VBE(OFF)=-5.0V VCE=400V;VBE(OFF)=-5.0V Ta=125℃ VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 10 MIN 400 2SC2333 TYP. MAX UNIT V 1.0 1.2 1.0 10 1.0 10 10 80 V V mA μA mA μA μA 1.0 2.5 1.0 μs μs μs hFE-1 classifications M 20-40 L 30-60 K 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2333 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 4