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2SC2335

2SC2335

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC2335 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SC2335 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ・Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2335 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VCE=400V ;VBE(off)=-1.5V TC=125℃ VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1.0A ; VCE=5V IC=3.0A ; VCE=5V 20 20 10 MIN 400 TYP. 2SC2335 MAX UNIT V 1.0 1.2 10 10 5.0 10 80 80 V V μA μA mA μA Switching times ton tstg tf Turn-on time Storage time Fall time VCC=150V;IC=3.0A; IB1=-IB2=600mA; RL=50Ω 1.0 2.5 1.0 μs μs μs hFE-2 Classifications M 20-40 L 30-60 K 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2335 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335 4
2SC2335 价格&库存

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